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BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features TrenchMOS technology Q101 compliant 175 C rated Standard level compatible 1.3 Applications Automotive systems 12 V loads Motors, lamps and solenoids General purpose power switching 1.4 Quick reference data EDS(AL)S 1.3 J RDSon = 2.9 m (typ) ID 75 A Ptot 255 W 2. Pinning information Table 1 Pinning Pin Description Simplified outline Symbol 1 gate (G) D mb mb 2 drain (D) 3 source (S) G mb mounting base; connected to drain (D) mbb076 S 2 1 3 SOT404 (D2PAK) 1 2 3 SOT78 (TO-220AB) BUK753R4-30B; BUK763R4-30B Philips Semicon