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Philips Semiconductors Product specification PowerMOS transistor PHP3055L Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 60 V avalanche energy capability, stable ID Drain current (DC) 12 A blocking voltage, fast switching and Ptot Total power dissipation 50 W high thermal cycling performance RDS(ON) Drain-source on-state resistance 0.18 with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBO

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 php3055l 2.pdf Проектирование, MOSFET, Мощность

 php3055l 2.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

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