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Preliminary Datasheet RJK6024DPE R07DS0424EJ0100 Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 06, 2011 Features Low on-resistance RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source G 4. Drain 1 2 3 S Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS 30 V Drain current ID 0.4 A Drain peak current ID (pulse)Note1 0.6 A Body-drain diode reverse drain current IDR 0.4 A Body-drain diode reverse drain peak current IDR (pulse)Note1 0.6 A Channel dissipation Pch Note2 20 W Channel to case thermal impedance ch-c 6.25 C/W Channel temperature Tch 150 C Storage temperature Tstg