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Preliminary Datasheet RJL5012DPE R07DS0435EJ0200 (Previous REJ03G1745-0100) Silicon N Channel MOS FET Rev.2.00 High Speed Power Switching Jun 14, 2011 Features Built-in fast recovery diode Low on-resistance RDS(on) = 0.56 typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0004AE-B (Package name LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source G 4. Drain 1 2 3 S Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 500 V Gate to source voltage VGSS 30 V Drain current ID 12 A Drain peak current ID (pulse)Note1 36 A Body-drain diode reverse drain current IDR 12 A Body-drain diode reverse drain peak current IDR (pulse)Note1 36 A Avalanche current IAPNote3 3 A Avalanche energy EARNote3 0.5 mJ Channel dissipatio