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2SA1812 / 2SA1727 / 2SA1776 Transistors High-voltage Switching Transistor ( 400V, 0.5A) 2SA1812 / 2SA1727 / 2SA1776 Features 1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA. 3) High switching speed, typically tf 1 s at IC = 100mA. 4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V 0.5 A (DC) Collector current IC 1.0 A (Pulse) 1 0.5 W 2SA1812 2 W 2 Collector power 1 W PC 2SA1727 dissipation 10 W (Tc 25 C) 2SA1776 1 W 3 Junction temperature Tj 150 C Storage temperature C Tstg 55 to +150 1 Single pulse 2 When mounted on a 40 40 0.7mm ceramic board. 3 When t = 1.7mm and the foil collector area on the PC board is 1cm2 or greater.