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Data Sheet 1.5V Drive Pch MOSFET + PNP TRANSISTOR QS8F2 Structure Dimensions (Unit mm) Silicon P-channel MOSFET/ TSMT8 (8) (7) (6) (5) PNP TRANSISTOR Features 1) Low on-resistance. (1) (2) (3) (4) 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive). Abbreviated symbol F02 Application Switching Packaging specifications Inner circuit (8) (7) (6) (5) Package Taping Type Code TR Basic ordering unit (pieces) 3000 QS8F2 2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Emitter 1 (4) Tr2 Base (5) Tr2 Collector Absolute maximum ratings (Ta = 25 C) (6) Tr2 Collector (1) (2) (3) (4) (7) Tr1 Drain 1 ESD PROTECTION DIODE (8) Tr1 Drain Parameter Symbol Limits Unit 2 BODY DIODE Drain-source voltage VDSS 12 V Gate-source voltage VGSS 10 V Continuous ID 2.5 A Drain current Pulsed IDP*