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UMH33N Datasheet NPN 400mA 20V Complex Digital Transistors (Bias Resistor Built-in Transistors) For Muting. lOutline UMT6 Parameter Tr1 and Tr2 (6) (5) VCEO 20V (4) (1) (2) VEBO 40V (3) IC 400mA UMH33N SOT-353 (SC-88) R1 2.2kW lFeatures 1) Built-In Biasing Resistors 2) Two DTC923TUB chips in one package. 3) High Breakdown Voltage of Emitter to Base BVEBO is Min. 40V at IE=50mA 4) Low Output ON Resistance. Ron is Typ. 0.6W at VI=5V 5) Built-in bias resistors enable the configuration of lInner circuit Collector Base Emitter an inverter circuit without connecting external (6) (5) (4) input resistors (see equivalent circuit). 6) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 7) Lead Free/RoHS