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US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 Structure Dimensions (Unit mm) Silicon N-channel MOSFET / TUMT5 Schottky barrier diode 2.0 1.3 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. Abbreviated symbol U03 Applications Switching Package specifications Inner circuit (5) (4) Package Taping Type Code TR Basic ordering unit (pieces) 3000 US5U3 2 1 (1)Gate (2)Source (1) (2) (3) (3)Anode (4)Cathode 1 ESD protection diode (5)Drain 2 Body diode Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 12 V Continuous ID 1.5 A Drain current 1 Pulsed IDP 6.0 A Source current Co