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US5U35 Transistor 4V Drive Pch+SBD MOSFET US5U35 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TUMT5 Schottky Barrier DIODE 2.0 Features 1.3 1) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) With fast switching. 3) Built-in schottky barrier diode has low forward voltage. Abbreviated symbol U35 Applications Switching Packaging specifications Equivalent circuit Package Taping (5) (4) Code TR Type Basic ordering unit (pieces) 3000 2 US5U35 1 (1)Gate (2)Source (1) (2) (3) (3)Anode (4)Cathode 1 ESD protection diode (5)Drain 2 Body diode 1/5 0.2Max. US5U35 Transistor Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Drain-source voltage V V DSS -45 Gate-source voltage VGSS 20 V Continuous I 0.7 A D Drain current 1 Pulsed I