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Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 6.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 4.688 (Typ.) 1 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 800 Continuous Drain Current (TC=25 ) 1.7 ID A Continuous Drain Current (TC=100 ) 1.1 1 IDM Drain Current-Pulsed A O 6.8 VGS Gate-to-Source Voltage _ V 2 EAS Single Pulsed Avalanche Energy O 216 mJ IAR Avalanche Current 1 1.7 A O EAR Repetitive Avalanche Energy 1 4.5 mJ O dv/dt Peak Diode Recovery dv/dt 3 2.0 V/ns O Total Power Dissipation (TC=25 ) 45 W PD Linear Derating Factor 0.36 W/ Operating Junction