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Ordering number EN3811 P-Channel Silicon MOSFET 2SJ226 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SJ226] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 Source 2 Drain 3 Gate 2.5 2.5 SANYO FLP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 15 V Drain Current (DC) ID 2 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% 8 A Allowable Power Dissipation PD 1.5 W Channel Temperature Tch 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta = 25 C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Sour