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Ordering number EN4318 P-Channel Silicon MOSFET 2SJ308 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ308] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO TO-220ML Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 250 V Gate-to-Source Voltage VGSS 30 V Drain Current (DC) ID 9 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% 36 A 2.0 W Allowable Power Dissipation PD Tc=25 C 40 W Channel Temperature Tch 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta = 25 C Ratings Parameter Symbol Conditions Unit min ty