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2SK3904 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( -MOSVI) 2SK3904 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.2 (typ.) High forward transfer admittance Yfs = 9.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 450 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 450 V Drain-gate voltage (RGS = 20 k ) VDGR 450 V Gate-source voltage VGSS 30 V DC (Note 1) ID 19 Drain current A 1. GATE Pulse (Note 1) IDP 76 2. DRAIN (HEATSINK) 3. SOURCE Drain power dissipation (Tc = 25 C) PD 150 W Single pulse avalanche energy JEDEC EAS 820 mJ (Note 2) JEITA SC-65 Avalanche current IAR 19 A TOSHIBA 2-16C1B Repetitive avalanche energy (Note 3) E