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2SK4113 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIV) 2SK4113 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 2.0 (typ.) High forward transfer admittance Yfs = 4.5 S (typ.) Low leakage current IDSS = 100 A (VDS = 720 V) Enhancement mode Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 900 V Drain-gate voltage (RGS = 20 k ) VDGR 900 V Gate-source voltage VGSS 30 V DC (Note 1) ID 5 Drain current A Pulse (t = 1 ms) IDP 15 (Note 1) Drain power dissipation (Tc = 25 C) PD 45 W Single pulse avalanche energy EAS 595 mJ (Note 2) JEDEC Avalanche current IAR 5 A JEITA SC-67 Repetitive avalanche energy (Note 3) EAR 4.5 mJ TOSHIBA 2-10R1B Channel temperature Tch 150 C