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isc Silicon PNP Power Transistor 2N3196DESCRIPTIONExcellent Safe Operating AreaWith TO-3 packageLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor medium-speed switching and amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -60 VCBOV Collector-Emitter Voltage -60 VCEOV Emitter-Base Voltage -10 VEBOI Collector Current-Continuous -5 ACP Collector Power Dissipation@T =25 75 WC COperating and Storage Junction-65~+200 T TJ, stgTemperature RangeTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junction to Case 1.17 /Wth j-c1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Power Transistors 2N319