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2N3209X MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) 5.84 (0.230) SWITCHING 5.31 (0.209)TRANSISTOR 4.95 (0.195)4.52 (0.178)FOR HIGH RELIABILITY APPLICATIONS FEATURES SILICON PLANAR EPITAXIAL PNP TRANSISTOR SCREENING OPTIONS AVAILABLE 0.48 (0.019) SPACE QUALITY LEVEL OPTIONS 0.41 (0.016) HIGH SPEED SATURATED SWITCHING dia. APPLICATIONS 2.54 (0.100)For high reliability general purpose Nom.applications requiring small size and low weight devices. 3 12TO-18 (TO-206AA) Pin 1 Emitter Pin 2 Base Pin 3 Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25C unless otherwise stated VCBO Collector - Base Voltage -20V VCEO Collector - Emitter Voltage (IB = 0) -20V VEBO Emitter Base Voltage (IC = 0) -4.0V IC Continuous Collector Current -200mA PD Total Power Dissipation at Tcase 25C