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Databook.fxp 1/14/99 11:30 AM Page B-6B-6 01/992N3957, 2N3958N-Channel Dual Silicon Junction Field-Effect TransistorAbsolute maximum ratings at TA = 25C Low and Medium FrequencyReverse Gate Source & Reverse Gate Drain Voltage 50 VDifferential AmplifiersGate Current 50 mA High Input ImpedanceTotal Device Power Dissipation (each side) 250 mW@ 85C Case Temperature (both sides) 500 mWAmplifiersPower Derating (both sides) 4.3 mW/CAt 25C free air temperature: 2N3957 2N3958 Process NJ16Static Electrical Characteristics Min Max Min Max Unit Test ConditionsGate Source Breakdown Voltage V(BR)GSS 50 50 V IG = 1 A, VDS = V 100 100 pA VGS = 30V, VDS = VGate Reverse Current IGSS 500 500 nA VGS = 30V, VDS = V TA = 125C 50 50 pA VDS = 20V, ID = 200 AGate Operating Current IG 250 250