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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6300 2N6301 DESCRIPTION With TO-66 package DARLINGTON Low collector saturation voltage Complement to type 2N6298/6299 APPLICATIONS General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2N6300 60VCBO Collector-base voltage Open emitter V 2N6301 80 2N6300 60VCEO Collector-emitter voltage Open base V 2N6301 80 VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A ICM Collector current-peak 16 AIB Base current 0.12 APT Total power dissipation TC=25 75 W Tj Junction temperature 200 Tstg Storage temperature -65~200 THERMAL C

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 2n6300 2n6301.pdf Проектирование, MOSFET, Мощность

 2n6300 2n6301.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2n6300 2n6301.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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