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2N7002EN-channel TrenchMOS FETRev. 03 28 April 2006 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package usingTrenchMOS technology.1.2 Features Logic level threshold compatible Very fast switching Surface-mounted package TrenchMOS technology1.3 Applications Logic level translator High-speed line driver1.4 Quick reference data VDS 60 V ID 385 mA RDSon 3 Ptot 0.83 W2. Pinning informationTable 1: PinningPin Description Simplified outline Symbol1 gate (G)3 D2 source (S)3 drain (D)G12mbb076 SSOT232N7002EPhilips SemiconductorsN-channel TrenchMOS FET3. Ordering informationTable 2: Ordering informationType number PackageName Description Version2N7002E TO-236AB plastic surface-mounted package; 3 leads SOT234. Limiting v

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 2n7002e.pdf Проектирование, MOSFET, Мощность

 2n7002e.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2n7002e.pdf База данных, Инновации, ИМС, Транзисторы