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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N7002LT1/DTMOS FET Transistor2N7002LT13 DRAINNChannel EnhancementMotorola Preferred Device1GATE32 SOURCE1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcCASE 31808, STYLE 21SOT23 (TO236AB)DrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcDrain Current Continuous TC = 25C(1) ID 115 mAdcDrain Current Continuous TC = 100C(1) ID 75Drain Current Pulsed(2) IDM 800GateSource Voltage Continuous VGS 20 Vdc Nonrepetitive (tp 50 s) VGSM 40 VpkTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR5 Board,(3) TA = 25C PD 225 mWDerate above 25C 1.8 mW/CThermal Resistance, Junction to Ambient RJA 556 C/WTotal Device Dissipation PD 300 mWAlumina Substrate,(4)