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2N7002PS60 V, 320 mA N-channel Trench MOSFETRev. 1 1 July 2010 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits1.4 Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max UnitPer transistorVDS drain-source voltage Tamb =25C- - 60 VVGS gate-source voltage Tamb =25C- - 20 V[1]ID drain current Tamb =25C; - - 320 mAVGS =10VRDSon drain-source on-state Tj =25 C; - 1 1.6 resistance VGS =10V; ID = 500 mA[1] De