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October 20072N7002TN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantDSGSOT - 523FMarking : AAAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 60 VVDGR Drain-Gate Voltage RGS 1.0M 60 VVGSS Gate-Source Voltage Continuous 20VPulsed 40ID Drain Current Continuous 115Continuous @ 100C 73 mAPulsed 800TJ Junction Temperature 150 CTSTG Storage Temperature Range -55 to +150 C* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.Thermal CharacteristicsSymbol Parameter Value UnitsPD Total Device Dissi

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 2n7002t.pdf Проектирование, MOSFET, Мощность

 2n7002t.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2n7002t.pdf База данных, Инновации, ИМС, Транзисторы