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2N7002W Mosfet(N-Channel)SOT-3231. GATE 2. SOURCE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Marking: K72 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 60 V ID Drain Current 115 mA PD Power Dissipation 225 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNITVGS=0 V, ID=10 A 60Drain-Source Breakdown Voltage V(BR)DSSVGS=0 V, ID=3mA 60 V Gate-Threshold Voltage Vth(GS) VDS=VGS, ID=250 A 1 2.5Gate-body Leakage lGSS VDS=0 V, VGS=25 V 100 nA Zero Gate Voltage Drain Current IDSS VDS=60 V, V