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2SA1579 SOT-323 Transistor(PNP)SOT-3231. BASE 2. EMITTER 3. COLLECTOR Features High breakdown voltage. (BVCEO = -120V) Complements the 2SC4102 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector- Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -50 mA PC Collector Dissipation 100 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO IC=-50A,IE=0 -120 VCollector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -120 VEmitter-base breakdown voltage V(BR)EBO IE=-50A,IC=0 -5 VCollector cut-off current ICBO VCB=-100