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2SA1585S TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) Excellent DC current gain characteristics. Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V Dimensions in inches and (millimeters)IC Collector Current -Continuous -2 A PC Collector Power Dissipation 400 mW Tj Junction Temperature 150 Tstg Storage Temperature Range -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= -50A , IE=0 -20 VCollector-emitter breakdown voltage V(BR)CEO IC= -1mA , IB=0 -20 VEmitter-base break