Скачать даташит для 2sa1897:

DATA SHEETSILICON TRANSISTOR2SA1897PNP SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGThe 2SA1897 features a low saturation voltage and is available PACKAGE DRAWING (UNIT: mm)for high current control in small dimension. This transistor is idealfor high efficiency DC/DC converters due to fast switching speed.FEATURES High current capacitance Low collector saturation voltage and high hFE Insulation type package supportable for radial tapingQUALITY GRADES StandardPlease refer to Quality Grades on NEC Semiconductor Devices(Document No. C11531E) published by NEC Corporation toknow the specification of quality grade on the devices and itsrecommended applications.ABSOLUTE MAXIMUM RATINGS (Ta = 25C)Parameter Symbol Conditions Ratings UnitCollector to base voltage VCBO -30 VCollecto