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Ordering number : ENN65722SB817P / 2SD1047P2SB817P : PNP Epitaxial Planar Silicon Transistor2SD1047P : NPN Triple Diffused Planar Silicon Transistor2SB817P / 2SD1047P140V / 12A, AF80W Output ApplicationsFeaturesPackage Dimensions Capable of being mounted easily because of one- unit : mmpoint fixing type plastic molded package (Inter-2022Achangeable with TO-3).[2SB817P / 2SD1047P] Wide ASO because of built-in ballast resistance. Goode dependence of fT on current and good HF15.63.24.814.02.0characteristic.1.62.00.61.01 2 31 : Base0.62 : Collector3 : EmitterSpecifications5.45 5.45SANYO : TO-3PB( ) : 2SB817PAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO (-)160 VCollector-to-Emitter Voltage VCEO (-)140 VEmitter-to-Base Voltage VEBO (-)6 VCollect