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2SC1766 SOT-89-3L TRANSISTOR(NPN)FEATURES 1. BASE Small Flat Package2. COLLECTOR High Speed Switching Time Low Collector-emitter saturation voltage 3. EMITTER APPLICATIONS Power AmplifierMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current 2 A PC Collector Power Dissipation 500 mW RJA Thermal Resistance From Junction To Ambient 250 /W Tj Junction Temperature 150 Tstg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 50 VCollector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 VEmitter-base breakdown voltage V(BR)EBO IE=10