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2sc19802sc1980

Transistor2SC1980Silicon NPN epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SA9215.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 120 V +0.2 +0.20.45 0.1 0.45 0.1Collector to emitter voltage VCEO 120 V1.27 1.27Emitter to base voltage VEBO 7 VPeak collector current ICP 50 mA1 2 31:EmitterCollector current IC 20 mA2:Collector3:BaseCollector power dissipation PC 250 mW2.54 0.15JEDEC:TO92Junction temperature Tj 150 CEIAJ:SC43AStorage temperature Tstg 55 ~ +150 CElectrical Characteristics (Ta=25C)Parameter Symbol Conditions min typ max UnitICBO VCB = 50V, IE = 0 0.1 ACollector cutoff currentICEO VCE = 50V, IB = 0 1 A

 

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 2sc1980.pdf Проектирование, MOSFET, Мощность

 2sc1980.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2sc1980.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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