Скачать даташит для 2sc1980:
Transistor2SC1980Silicon NPN epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SA9215.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Low noise voltage NV.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 120 V +0.2 +0.20.45 0.1 0.45 0.1Collector to emitter voltage VCEO 120 V1.27 1.27Emitter to base voltage VEBO 7 VPeak collector current ICP 50 mA1 2 31:EmitterCollector current IC 20 mA2:Collector3:BaseCollector power dissipation PC 250 mW2.54 0.15JEDEC:TO92Junction temperature Tj 150 CEIAJ:SC43AStorage temperature Tstg 55 ~ +150 CElectrical Characteristics (Ta=25C)Parameter Symbol Conditions min typ max UnitICBO VCB = 50V, IE = 0 0.1 ACollector cutoff currentICEO VCE = 50V, IB = 0 1 A
Ключевые слова - ALL TRANSISTORS DATASHEET
2sc1980.pdf Проектирование, MOSFET, Мощность
2sc1980.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
2sc1980.pdf База данных, Инновации, ИМС, Транзисторы



Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet