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2sc23352sc2335

isc Silicon NPN Power Transistor 2SC2335DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.0V(Max)@ I = 3A, I = 0.6ACE(sat) C BFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed switching inInductive circuit , they are particularly suited for 115 and220V switchmode applications such as switching regulators,inverters,DC-DC and converter.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base Voltage 7.0 VEBOI Collector Current-Continuous 7.0 ACI Collector Current-Peak 15 ACMI Base Current-Continuous 3.5 ABTotal Power DissipationP 40 WC@ T =25CT

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 2sc2335.pdf Проектирование, MOSFET, Мощность

 2sc2335.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2sc2335.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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