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DATA SHEETSILICON POWER TRANSISTOR2SC2517NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SC2517 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching. This transistor is ideal for use in drivers such asswitching regulators, DC/DC converters, high-frequency poweramplifiers.FEATURES ow collector saturation voltage:VCE(sat) 0.6 V (at IC = 3.0 A) Fast switching speed:tf 0.5 s (at IC = 3.0 A) Wide base reverse-bias SOA:VCEX(SUS) 150 V (at IC = 3.0 A)ABSOLUTE MAXIMUM RATINGS (Ta = 25 C)Electrode Connection1. Base (B)Parameter Symbol Ratings Unit2. Collector (C)3. Emitter (E)Collector to base voltage VCBO 150 V4. Fin (collector)Collector to emitter voltage VCEO 100 VEIA : SC-46Emitter to base voltage VEBO 12 V EDEC: TO-220ABIEC: