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Power Transistors2SC3743Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh-speed switching 3.1 0.1Wide area of safe operation (ASO) with high breakdown voltageSatisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1+0.2Absolute Maximum Ratings (TC=25C)0.5 0.10.8 0.1Parameter Symbol Ratings Unit2.54 0.25Collector to base voltage VCBO 900 VVCES 900 V5.08 0.5Collector to emitter voltage1 2 3VCEO 800 V1:BaseEmitter to base voltage VEBO 7 V2:Collector3:EmitterPeak collector current ICP 5 ATO220 Full Pack Package(a)Collector current IC 3 ABase current IB 1 ACollector power TC=25 C 40PC Wdissipation Ta=25 C 2