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2SC4315 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4315 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 14dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VCollector current IC 80 mABase current IB 40 mACollector power dissipation PC 150 mWJunction temperature Tj 125 CStorage temperature range Tstg -55~125 CJEDEC JEITA TOSHIBA 2-3J1CWeight: 0.012 g (typ.) Microwave Characteristics (Ta == 25C) ==Characteristics Symbol Test Condition Min Typ. Max UnitTransition frequency fT VCE = 10 V, IC = 20 mA 5 7 GHz S21e2 (1) VCE = 10 V, IC = 20 mA, f = 500 MHz 19.5 Insertion gain dB S21e2 (2