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SMD Type TransistorsNPN Transistors2SC4504SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=20V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 3 Collector Current - Continuous IC 0.3A Collector Current - Pulse ICP 0.60.5 Collector Power Dissipation PC W(Note.1) 1.3 Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150Note.1 : Mounted on ceramic substrate of 250mm2X0.8mm Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 A IE= 0 30 Collector- emitter breakdown voltage VCEO Ic= 1 mA RBE= 20 V