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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4507DESCRIPTIONFast switching speedSilicon NPN planar diffused planar transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio temperature compensation and general purposeABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 5 ACI Base Current-Continuous 1 ABCollector Power DissipationP 40 WC@T =25CJunction Temperature 150 TJT Storage Temperature -55~150 stgisc websitewww.iscsemi.com 1 isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4507ELECTRICAL CHARACTERISTICSTj=25 unless ot