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Ordering number:EN3699ANPN Triple Diffused Planar Silicon Transistor2SC4630900V/100mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=900V).unit:mm Small Cob (typical Cob=2.8pF).2079B Full isolation package.[2SC4630] High reliability (Adoption of HVP process).4.510.02.83.20.90.71.20.751 : Base1 2 32 : Collector3 : Emitter2.55 2.55SANYO : TO-220FI (LS)SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 1500 VCollector-to-Emitter Voltage VCEO 900 VEmitter-to-Base Voltage VEBO 5 VCollector Current IC 100 mACollector Current (Pulse) ICP 300 mACollector Dissipation PC 2 WJunction Temperature Tj 150 CStorage Temperature Tstg 55 to +150 CElectrical Characteri