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Ordering number : ENN3699B2SC4630LSNPN Triple Diffused Planar Silicon Transistor2SC4630LS900V / 100mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCEO min=900V).unit : mm Small Cob(typical Cob=2.8pF).2079D Full isolation package.[2SC4630LS] High reliability(Adoption of HVP process).10.0 4.53.22.80.91.2 1.20.75 0.71 2 31 : Base2 : Collector3 : EmitterSpecifications2.55 2.55SANYO : TO-220FI(LS)Absolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 1500 VCollector-to-Emitter Voltage VCEO 900 VEmitter-to-Base Voltage VEBO 5 VCollector Current IC 100 mACollector Current (Pulse) ICP 300 mACollector Dissipation PC 2 WJunction Temperature Tj 150 CStorage Temperature Tstg --55 to +150 CEle