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Ordering number:EN3688ANPN Triple Diffused Planar Silicon Transistor2SC47102100V/10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=2100V).unit:mm Small Cob (typical Cob=1.3pF).2079B Wide ASO.[2SC4710] High reliability (Adoption of HVP process).4.510.02.8 Full isolation package.3.20.90.71.20.751 : Base1 2 32 : Collector3 : Emitter2.55 2.55SANYO : TO-220FISpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 2100 VCollector-to-Emitter Voltage VCEO 2100 VEmitter-to-Base Voltage VEBO 5 VCollector Current IC 10 mACollector Current (Pulse) ICP 30 mACollector Dissipation PC 2 WJunction Temperature Tj 150 CStorage Temperature Tstg 55 to +150 CElectrical