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Ordering number:EN4578ANPN Epitaxial Planar Silicon Transistor2SC4853Low-Voltage, Low-CurrentHigh-Frequency Amplifier ApplicationsFeatures Package Dimensions Low-voltage, low-current operation : fT=5GHz typ.unit:mm2(VCE=1V, IC=1mA) : S21e =7dB typ (f=1GHz).2059B: NF=2.6dB typ (f=1GHz).[2SC4853]0.30.1530~0.11 20.3 0.60.65 0.650.92.01 : Base2 : Emitter3 : CollectorSANYO : MCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 12 VCollector-to-Emitter Voltage VCEO 6 VEmitter-to-Base Voltage VEBO 1.5 VCollector Current IC 15 mACollector Dissipation PC 80 mWJunction Temperature Tj 150 CStorage Temperature Tstg 55 to +150CElectrical Characteristics at Ta = 25CRatingsParameter Symbol Conditions Unitmin typ maxCollector Cut

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 2sc4853.pdf Проектирование, MOSFET, Мощность

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 2sc4853.pdf База данных, Инновации, ИМС, Транзисторы