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Power Transistors2SC6012Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage, and high reliability through the use of aglass passivation layer High-speed switching 55 Wide safe oeration area(4.0)52.00.21.10.1 Absolute Maximum Ratings TC = 25C0.70.1Parameter Symbol Rating Unit5.450.310.90.5Collector-base voltage (Emitter open) VCBO 1 700 VCollector-emitter voltage (E-B short) VCES 1 700 V51 2 31: BaseEmitter-base voltage (Collector open) VEBO 7 V2: CollectorBase current IB 3 A3: EmitterEIAJ: SC-94Collector current IC 15 ATOP-3E-A1 PackagePeak collector current * ICP 24 AInternal ConnectionCollector power dissipation PC 60 WCTa = 25C3Junction temperature Tj 150 CBStorage t