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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6082DESCRIPTIONLarge current capacitanceHigh speed switchingLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 50 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current- Continuous 15 ACI Base Current- Continuous 3 ABI Collector Current-Pulse 20 ACPCollector Power Dissipation2@ T =25aP WCCollector Power Dissipation23@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Silicon NPN Power Transistor