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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6097DESCRIPTIONLarge current capacitanceHigh-speed switchingHigh allowable power dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC-DC converter,relay drivers,lamp drivers,motor drivers,inverterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 100 VCBOV Collector-Emitter Voltage 60 VCEOV Emitter-Base Voltage 6.5 VEBOI Collector Current-Continuous 3 ACI Collector Current-Peak 5 ACMI Base Current-Continuous 0.6 ABCollector Power Dissipation15@ T =25CP WCCollector Power Dissipation0.8@T =25aT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registere