Скачать даташит для 2sd1030_e:

Transistor2SD1030Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).1High emitter to base voltage VEBO.3Low noise voltage NV.Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing and the magazinepacking.0.1 to 0.30.4 0.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 50 V1:Base JEDEC:TO236Collector to emitter voltage VCEO 40 V2:Emitter EIAJ:SC593:Collector Mini Type PackageEmitter to base voltage VEBO 15 VPeak collector current ICP 100 mAMarking symbol : 1ZCollector current IC 50 mACollector power dissipation PC 200 mWJunction temperature Tj