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isc Silicon NPN Power Transistor 2SD1037DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 150V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBOV Collector-Emitter Voltage 120 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 30 ACCollector Power DissipationP 180 WC@ T =25CT Junction Temperature 150 JStorage Temperature Range -55~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor 2SD1037ELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNITV C

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