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isc Silicon NPN Power Transistor 2SD113DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOHigh Power DissipationHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifier, power switching applications.DC-DC converter and regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage 100 VCBOV Collector-Emitter Voltage 80 VCEOV Emitter-Base Voltage 10 VEBOI Collector Current-Continuous 30 ACI Emitter Current-Continuous 30 AEI Base Current-Continuous 5 ABCollector Power DissipationP 200 WC@T =25CT Junction Temperature 150 jT Storage Temperature Range -65~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power T