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isc Silicon NPN Power Transistor 2SD1136DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching and TV horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 200 VCBOV Collector-Emitter Voltage 80 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 4 ACI Collector Current-Peak 5 ACMI Collector Current-Surge 15 AC(surge)Collector Power Dissipation1.8@ T =25aP WCCollector Power Dissipation30@ T =25CT Junction Temperature 150 JStorage Temperature Range -45~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silic