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2sd1205_e2sd1205_e

Transistor2SD1205, 2SD1205ASilicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency amplification6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE= 4000 to 2000.A shunt resistor is omitted from the driver.0.85M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.55 0.1 0.45 0.05Absolute Maximum Ratings (Ta=25C)3 2 1Parameter Symbol Ratings UnitCollector to 2SD1205 30VCBO V 2.5 2.5base voltage 2SD1205A 60Collector to 2SD1205 251:BaseVCEO V2:Collector EIAJ:SC71emitter voltage 2SD1205A 503:Emitter M Type Mold PackageEmitter to base voltage VEBO 5 VInternal ConnectionPeak collector current ICP 750 mACollector cur

 

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 2sd1205 e.pdf Проектирование, MOSFET, Мощность

 2sd1205 e.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2sd1205 e.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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