Скачать даташит для 2sd1230:

isc Silicon NPN Darlington Power Transistor 2SD1230DESCRIPTIONHigh DC Current Gain: h = 1500(Min.)@ I = 4A, V = 3VFE C CECollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOComplement to Type 2SB913Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers, relaydrivers, voltage regulator control applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 110 VCBOV Collector-Emitter Voltage 100 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 8 ACI Collector Current-Peak 12 ACMCollector Power Dissipation2.5@T =25aP WCCollector Power Dissipation60@T =25CT Junction Temperature 150 jT Storage Temperature Range -55~150 stg1isc websitewww