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isc Silicon NPN Power Transistors 2SD1236LDESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 3ACE(sat) CLarge Current CapacityComplement to Type 2SB920LMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters,converters,and other general high-current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 90 VCBOV Collector-Emitter Voltage 80 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 5 ACI Collector Current-Pulse 9 ACPCollector Power Dissipation1.75@ T =25aP WCCollector Power Dissipation30@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is regi