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Transistor2SD1244Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Low collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.M type package allowing easy automatic and manual insertion as0.85well as stand-alone fixing to the printed circuit board.0.55 0.1 0.45 0.05Absolute Maximum Ratings (Ta=25C)3 2 1Parameter Symbol Ratings UnitCollector to base voltage VCBO 40 V2.5 2.5Collector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 7 V1:BasePeak collector current ICP 8 A2:Collector EIAJ:SC713:Emitter M Type Mold PackageCollector current IC 5 ACollector power dissipation PC* 1 WJunction temperature Tj 150 CStorage temperature Tstg 55 ~ +150 C*Pri